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Cryogenic Silicon Analysis System Spectrometer

Cryogenic Silicon Analysis System Spectrometer

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Cryogenic Silicon Analysis System Spectrometer

CryoSAS combines high performance FTIR spectrometers with built-in, closed-cycle cryo-cooling technique that does not require any liquid Helium. All CryoSAS components are state-of-the-art, yet utilize proven technologies to accomplish a difficult analysis in the demanding silicon production environment. CryoSAS can be operated at a high level of automation including accurate reporting of the analysis results.

Specification:

Spectral range: 1500 – 280cm-1 optimized for the detection of

1. Group III and V shallow impurities in single crystal Si according to ASTM/SEMI MF1630.  For wedged samples with a thickness of approx. 3mm, the following detection limits can be reached:

 

  • 10ppta Phosphorus
  • 30ppta Boron

 

2. Substitutional Carbon according to ASTM/SEMI MF1391. This method requires a Carbon free FZ reference sample with thickness and surface properties comparable to the sample specimen. For a wedged sample with a thickness of approx. 3mm, Carbon concentrations down to 20ppba can be detected.